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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA2503
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The PA2503, which has a heat spreader, is N-channel applications of notebook computers.
0.65 TYP.
PACKAGE DRAWING (Unit: mm)
MOS Field Effect Transistor designed for power management
FEATURES
spreader. The land size is same as 8-pin TSSOP. * Low on-state resistance RDS(on)1 = 9.5 m MAX. (VGS = 10.0 V, ID = 8.0 A) RDS(on)2 = 15.1 m MAX. (VGS = 4.5 V, ID = 8.0 A) * Low Ciss: 1200 pF TYP. (VDS = 10.0 V, VGS = 0 V)
0.25 -0.05 0.10 M
* PA2503 has a thin surface mount package with a heat
+0.1
1 2 3 4
5.8 0.1 6.4 0.1
8 7 6 5
3.15 0.15
3 0.1 0.17 0.05 0.8 MAX.
0.10 S
ORDERING INFORMATION
PART NUMBER PACKAGE 8PIN HWSON
0 -0
+0.05
PA2503TM
0.75 0.15
2.2 0.2
1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain
4.15 0.2
0.85 0.15
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC)
Note1 Note2 Note1
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
30.0 20.0 16.0 64.0 2.7 150 -55 to +150 16.0 25.6
V V A A W C C A mJ
Gate Protection Diode Source Gate
Drain Current (pulse)
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation Channel Temperature Storage Temperature
Single Avalanche Current
Note3
IAS EAS
Body Diode
Single Avalanche Energy Note3
2 Notes 1. Mounted on FR-4 board of 25 cm x 1.6 mm, PW 10 sec
2. PW 10 s, Duty Cycle 1% 3. Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20.0 0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. G16682EJ1V0DS00 (1st edition) Date Published December 2003 NS CP(K) Printed in Japan
2003
PA2503
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 30.0 V, VGS = 0 V VGS = 18.0 V, VDS = 0 V VDS = 10.0 V, ID = 1.0 mA VDS = 10.0 V, ID = 8.0 A VGS = 10.0 V, ID = 8.0 A VGS = 4.5 V, ID = 8.0 A VDS = 10.0 V VGS = 0 V f = 1.0 MHz VDD = 15.0 V, ID = 8.0 A VGS = 10.0 V RG = 10
MIN.
TYP.
MAX. 1.0 10.0
UNIT
A A
V S
1.5 5 7.5 11.0 1200 320 190 12 17 52 15
2.5
Drain to Source On-state Resistance
9.5 15.1
m m pF pF pF ns ns ns ns nC nC nC V ns nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 15.0 V VGS = 5.0 V ID = 16.0 A IF = 16.0 A, VGS = 0 V IF = 16.0 A, VGS = 0 V di/dt = 100 A/s
15 4 7 0.84 28 18
Note Pulsed: PW 350 s, Duty Cycle 2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
RL VDD
VGS VGS
Wave Form
0
10%
VGS
90%
VDS
90% 90% 10% 10%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet G16682EJ1V0DS
PA2503
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - %
120 100 80 60 40 20 0 0 25 50 75 100 125 150 175
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
3
PT - Total Power Dissipation - W
2.5 2 1.5 1 0.5 0 0 25
Mounted on FR-4 board of 25 cm2 x 1.6 mm, PW 10 sec
50
75
100
125
150
175
TA - Ambient Temperature - C
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
1000 100 10 1 0.1 0.01 0.1 1 10 100
VDS - Drain to Source Voltage - V
RDS(on) Limited (at VGS = 10 V) ID(pulse) ID(DC) PW = 1 ms
ID - Drain Current - A
10 ms 30 ms Single pulse Mounted on FR-4 board of 25 cm x 1.6 mm
2
10 s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - C/W
1000
100
10
1 Single pulse Mounted on FR-4 board of 25 cm2 x 1.6 mm 0.1
1m 10 m 100 m 1 10 PW - Pulse Width - s 100 1000
Data Sheet G16682EJ1V0DS
3
PA2503
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS
80 Pulsed
ID - Drain Current - A
100 10 1 0.1 0.01 0.001
0 0.2 0.4 0.6 0.8 1
VDS = 10.0 V Pulsed TA = 125C 75C 25C -25C
60
VGS = 10.0 V 4.5 V
40
20
0
VDS - Drain to Source Voltage - V
ID - Drain Current - A
1
1.5
2
2.5
3
3.5
4
4.5
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
2.4
VGS(off) - Gate Cut-off Voltage - V
100 VDS = 10.0 V Pulsed 10
VDS = 10.0 V ID = 1.0 mA 2
1.6
1
1.2
0.1
TA = -25C 25C 75C 125C
0.8 -50 0 50 100 150
Tch - Channel Temperature - C
0.01 0.01
0.1
1
10
100
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
25 20 15 10 5 0
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
Pulsed
25 20 15 10 5 0 0 5 10 15 20
VGS - Gate to Source Voltage - V
ID = 8.0 A Pulsed
VGS = 4.5 V 10.0 V
0.1
1
10
100
ID - Drain Current - A
4
Data Sheet G16682EJ1V0DS
PA2503
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - m
25 20 15 10 5 0 -50 0 50 100 150
Tch - Channel Temperature - C Ciss, Coss, Crss - Capacitance - pF
10000
ID = 8.0 A Pulsed
VGS = 0 V f = 1.0 MHz
VGS = 4.5 V 10.0 V
1000
Ciss
Coss 100 0.1 1 10 Crss 100
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
1000
td(on), tr, td(off), tf - Switching Time - ns
VGS - Gate to Source Voltage - V
VDD = 15.0 V VGS = 10.0 V RG = 10 td(off) tf tr td(on)
5 4 3 2 1 0 VDD = 15.0 V ID = 16.0 A
100
10
1 0.1 1 10 100
ID - Drain Current - A
0
4
8
12
16
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
100
IAS - Single Avalanche Current - A IF - Diode Forward Current - A
100
VGS = 0 V Pulsed 10
IAS = 16.0 A 10 EAS = 25.6 mJ
1
1
0.1
VDD = 15.0 V RG = 25 VGS = 20.0 0 V Starting Tch = 25C
0.01 0.4 0.6 0.8 1 1.2
VF(S-D) - Source to Drain Voltage - V
0.1 0.01
0.1
1
10
L - Inductive Load - mH
Data Sheet G16682EJ1V0DS
5
PA2503
EXAMPLE OF THE LAND PATTERN
Please optimize the land pattern in consideration of density, appearance of solder fillets, common difference, etc in an actual design.
l3 e1: 0.65 b2: 0.35 b3: 2.7 l1: 1.3 l2: 3.7 l3: 7.1 (Unit: mm) l1 l2
e1 b3
b2
6
Data Sheet G16682EJ1V0DS
PA2503
* The information in this document is current as of December, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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